Author:
Lacord Joris,Ghibaudo Gérard,Boeuf Frédéric
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Cited by
58 articles.
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1. Impact of Device Parametrics on a 10nm Gate Length SOI n-FinFET;2024 IEEE International Conference on Information Technology, Electronics and Intelligent Communication Systems (ICITEICS);2024-06-28
2. Impacts of Parasitic Effects on PCM-based Neuromorphic Circuits Under Advanced Technology Nodes;2024 2nd International Symposium of Electronics Design Automation (ISEDA);2024-05-10
3. Parasitic Capacitance in Nanosheet FETs: Extraction of Different Components and Their Analytical Modeling;IEEE Transactions on Electron Devices;2024-05
4. A novel test structure with two active areas for eNVM reliability studies;2024 IEEE 36th International Conference on Microelectronic Test Structures (ICMTS);2024-04-15
5. Influence of gate-source/drain overlap on FeFETs;Solid-State Electronics;2024-04