Simulation Research on Photoelectric Parameters of Optical Voltage Sensors with ZnS Doped Dielectric Materials-Reference-Cited by-同舟云学术

Simulation Research on Photoelectric Parameters of Optical Voltage Sensors with ZnS Doped Dielectric Materials

Published:2022-10-30 Issue: Volume: Page:
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Container-title:2022 IEEE Conference on Electrical Insulation and Dielectric Phenomena (CEIDP)
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Author:

Chen Siqi¹,Qi Wen¹,Liu Miao¹,Qu Jia²,Zhao Luxing³,Shen Boyang⁴,Bian Xingming¹

Affiliation:

1. North China Electric Power University,State Key Laboratory of Alternate Electrical Power System with Renewable Energy Sources,Beijing,P.R.China,102206

2. State Grid Tibet Electric Power Co., Ltd. Naqu Power Supply Company,Naqu,China,852000

3. Tibet Yangbajing High Altitude Electrical Safety and Electromagnetic Environment National Observation and Research Station,Lhasa,China,851500

4. University of Cambridge,Electrical Engineering Division,Cambridge,UK,CB3 0FA

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9985012/9985245/09985390.pdf?arnumber=9985390

Reference8 articles.

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4. Understanding of electronic and optical properties of ZnS with high concentration of point defects induced by hot pressing process: The first-principles calculations[J];mlab;Computational Materials Science,174

5. Electron Tunneling at the TiO2/Substrate Interface Can Determine Dye-Sensitized Solar Cell Performance