A 0.6V–1.8V Compact Temperature Sensor With 0.24 °C Resolution, ±1.4 °C Inaccuracy and 1.06nJ per Conversion-Reference-Cited by-同舟云学术

A 0.6V–1.8V Compact Temperature Sensor With 0.24 °C Resolution, ±1.4 °C Inaccuracy and 1.06nJ per Conversion

Published:2022-06-15 Issue:12 Volume:22 Page:11480-11488
ISSN:1530-437X
Container-title:IEEE Sensors Journal
language:
Short-container-title:IEEE Sensors J.

Author:

Zambrano Benjamin¹^ORCID,Garzon Esteban¹^ORCID,Strangio Sebastiano²^ORCID,Iannaccone Giuseppe²^ORCID,Lanuzza Marco¹^ORCID

Affiliation:

1. Dipartimento di Ingegneria Informatica, Modellistica, Elettronica e Sistemistica (DIMES), Università della Calabria, Rende, Italy

2. Dipartimento di Ingegneria dell’Informazione, Università di Pisa, Pisa, Italy

Funder

Ministero dell’Istruzione, dell’Università e della Ricerca (MIUR) CrossLab Departments of Excellence Grant

Electronic Components and Systems for European Leadership (ECSEL) Joint Undertaking

European Union’s Horizon 2020 Research and Innovation Program and Finland, Austria, Belgium, Czechia, Germany, Italy, Latvia, The Netherlands, Poland, and Switzerland

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Instrumentation

Link

http://xplorestaging.ieee.org/ielx7/7361/9795939/09764728.pdf?arnumber=9764728

Reference27 articles.

1. A 763 pW 230 pJ/Conversion Fully Integrated CMOS Temperature-to-Digital Converter With +0.81 °C/−0.75 °C Inaccuracy

2. A +0.44°C/−0.4°C Inaccuracy Temperature Sensor With Multi-Threshold MOSFET-Based Sensing Element and CMOS Thyristor-Based VCO

3. 9.2 A 0.6nJ −0.22/+0.19°C inaccuracy temperature sensor using exponential subthreshold oscillation dependence

4. An 11-nW CMOS Temperature-to-Digital Converter Utilizing Sub-Threshold Current at Sub-Thermal Drain Voltage

5. A 0.05 mm2, 350 mV, 14 nW Fully-Integrated Temperature Sensor in 180-nm CMOS

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