Modeling of Three-Axis Hall Effect Sensor Based on CMOS Process-Reference-Cited by-同舟云学术

Modeling of Three-Axis Hall Effect Sensor Based on CMOS Process

Published:2023-10-15 Issue:20 Volume:23 Page:24686-24695
ISSN:1530-437X
Container-title:IEEE Sensors Journal
language:
Short-container-title:IEEE Sensors J.

Author:

Fan Hua¹^ORCID,Yue Huichao¹,Bonizzoni Edoardo²^ORCID,Feng Quanyuan³^ORCID,Wei Qi⁴^ORCID

Affiliation:

1. School of Integrated Circuit Science and Engineering (Exemplary School of Microelectronics), University of Electronic Science and Technology of China (UESTC), Chengdu, China

2. Department of Electrical, Computer and Biomedical Engineering, University of Pavia, Pavia, Italy

3. School of Information Science and Technology, Southwest Jiaotong University, Chengdu, China

4. Department of Precision Instrument, Tsinghua University, Beijing, China

Funder

National Natural Science Foundation of China

Sichuan Science and Technology Program

Fundamental Research Funds for the Central Universities

General Project of Chongqing Natural Science Foundation

Basic and Applied Basic Research Foundation of Guangdong Province

Major Project of the National Natural Science Foundation of China

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Instrumentation

Link

http://xplorestaging.ieee.org/ielx7/7361/10286142/10247219.pdf?arnumber=10247219

Reference27 articles.

1. COMSOL modeling of Hall sensors efficiency

2. Analysis and modeling of four-folded vertical Hall devices in current domain

3. From Three-Contact Vertical Hall Elements to Symmetrized Vertical Hall Sensors with Low Offset

4. A current-mode CMOS integrated microsystem for current spinning magnetic hall sensors

5. A novel parallel-field hall sensor with low offset and temperature drift based 2D integrated magnetometer

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