Current-Mode Signal Enhancement in the Ion-Selective Field Effect Transistor (ISFET) in the Presence of Drift and Hysteresis-Reference-Cited by-同舟云学术

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Current-Mode Signal Enhancement in the Ion-Selective Field Effect Transistor (ISFET) in the Presence of Drift and Hysteresis

Published:2021-02-15 Issue:4 Volume:21 Page:4705-4712
ISSN:1530-437X
Container-title:IEEE Sensors Journal
language:
Short-container-title:IEEE Sensors J.

Author:

Jamasb Shahriar^ORCID

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Instrumentation

Link

http://xplorestaging.ieee.org/ielx7/7361/9328368/09240998.pdf?arnumber=9240998

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. The Physics and Operating Principles of Field-effect Transistor-based Biosensors;Field-effect Transistor Biosensors for Rapid Pathogen Detection;2024-05-03

2. Influence of Gate Material, Geometry, and Temperature on ISFET Performance in pH Sensing Applications;Silicon;2023-04-11

3. An organic semiconductor obtained with a low-temperature process for light-addressable potentiometric sensors;Sensors and Actuators B: Chemical;2023-04

4. Field‐Effect Transistor‐Based Biosensor for pH Sensing and Mapping;Advanced Sensor Research;2023-03-03

5. Ion Sensitive Field Effect Transistor as a Bio-compatible Device: A Review;2022 International Conference on Electronics and Renewable Systems (ICEARS);2022-03-16

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