Enhanced Optoelectronic Traits of Monolayer h-BAs for Augmented NO<sub>x</sub> (NO and NO<sub>2</sub>) Gas Sensing-Reference-Cited by-同舟云学术

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Enhanced Optoelectronic Traits of Monolayer h-BAs for Augmented NO_x (NO and NO₂) Gas Sensing

Published:2024-07-01 Issue:13 Volume:24 Page:20504-20511
ISSN:1530-437X
Container-title:IEEE Sensors Journal
language:
Short-container-title:IEEE Sensors J.

Author:

Ranjan Prabhat¹^ORCID,Mishra Neha¹,Kumar Santosh²^ORCID,Agarwal Amit³,Dasgupta Avirup¹^ORCID

Affiliation:

1. Department of Electronics and Communication Engineering, Indian Institute of Technology Roorkee, Roorkee, Uttarakhand, India

2. Department of Electronics and Communication Engineering, Koneru Lakshmaiah Education Foundation, Vaddeswaram, Andhra Pradesh, India

3. Department of Electrical Engineering, IIndian Institute of Technology Kanpur, Kanpur, Uttar Pradesh, India

Funder

Indian Institute of Technology Roorkee

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Link

http://xplorestaging.ieee.org/ielx8/7361/10577556/10542648.pdf?arnumber=10542648

Reference44 articles.

1. A DFT study of transition metal (Fe, Co, Ni, Cu, Ag, Au, Rh, Pd, Pt and Ir)-embedded monolayer MoS2 for gas adsorption

2. l-Cysteine-Assisted Synthesis of Layered MoS2/Graphene Composites with Excellent Electrochemical Performances for Lithium Ion Batteries

3. Recent development of two-dimensional transition metal dichalcogenides and their applications

4. Strain Modulated Electronic, Mechanical, and Optical Properties of the Monolayer PdS2, PdSe2, and PtSe2 for Tunable Devices

5. Size and shape dependence of optical properties of nanostructures

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