Determinants Affecting the Performance of CZTSSe: Antisite Defects and Multiple Quantum Confinement for Photon-Sensitive Devices-Reference-Cited by-同舟云学术

Determinants Affecting the Performance of CZTSSe: Antisite Defects and Multiple Quantum Confinement for Photon-Sensitive Devices

Published:2022-08-15 Issue:16 Volume:22 Page:15944-15952
ISSN:1530-437X
Container-title:IEEE Sensors Journal
language:
Short-container-title:IEEE Sensors J.

Author:

Chandrasekar P.¹^ORCID,Routray Soumyaranjan¹^ORCID,Palaniswamy S. K.¹,Lenka Trupti Ranjan²^ORCID,Menon P. Susthitha³^ORCID

Affiliation:

1. Department of Electronics and Communication Engineering, Faculty of Engineering and Technology, SRM Institute of Science and Technology, Kattankulathur, Chennai, Tamil Nadu, India

2. Department of Electronics and Communication Engineering, National Institute of Technology Silchar, Silchar, Assam, India

3. Institute of Microengineering and Nanoelectronics (IMEN), Universiti Kebangsaan Malaysia (UKM), Bangi, Selangor, Malaysia

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Instrumentation

Link

http://xplorestaging.ieee.org/ielx7/7361/9857501/09832555.pdf?arnumber=9832555

Reference40 articles.

1. The electrical and optical properties of kesterites

2. An approach to high efficiencies using GaAs/GaInNAs multiple quantum well and superlattice solar cell

3. Numerical Investigations and Analysis of Cu2ZnSnS4Based Solar Cells by SCAPS-1D

4. Towards highly efficient thin-film solar cells with a graded-bandgap CZTSSe layer

5. Reduction of interface recombination current for higher performance of p+-CZTSxSe(1-x)/p-CZTS/n-CdS thin-film solar cells using Kesterite intermediate layers

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