Highly Electroactive Sb-Doped BaSrFeO<sub>3-δ</sub> Semiconductor as a Label-Free Electrochemical Aptsensing Platform for Thrombin Detection-Reference-Cited by-同舟云学术

Highly Electroactive Sb-Doped BaSrFeO_3-δ Semiconductor as a Label-Free Electrochemical Aptsensing Platform for Thrombin Detection

Published:2023-05-01 Issue:9 Volume:23 Page:9077-9085
ISSN:1530-437X
Container-title:IEEE Sensors Journal
language:
Short-container-title:IEEE Sensors J.

Author:

Rauf Sajid¹^ORCID,Tayyab Zuhra¹,Pan Xiaofang¹^ORCID,Yang Yatao¹^ORCID,Hussain Arshad²,Yunzhi Hua³,Amin Naima⁴,Rauf Sana⁵^ORCID,Saleem Adil⁵,Xu Wei¹^ORCID

Affiliation:

1. College of Electronics and Information Engineering and the State Key Laboratory of Radio Frequency Heterogeneous Integration, Shenzhen University, Guangdong, Shenzhen, China

2. Institute of Advanced Study, Shenzhen University, Guangdong, Shenzhen, China

3. Shenzhen Institute of Information Technology, Guangdong, Shenzhen, China

4. Department of Physics, COMSATS University Islamabad, Lahore Campus, Lahore, Pakistan

5. College of Physics and Optoelectronic Engineering, Shenzhen University, Guangdong, Shenzhen, China

Funder

National Natural Science Foundation of China

Natural Science Foundation of Guangdong Province

Shenzhen Science and Technology Program

Shenzhen-Hong Kong-Macau S&T Program

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject