A DFT Calculation: Gas Sensitivity of Defect GeSe to Air Decomposition Products (CO, No and NO2)
Author:
Affiliation:
1. College of Engineering and Technology, Southwest University, Chongqing, China
2. State Grid Chongqing Wushan Power Supply Company, Chongqing, China
3. College of Optoelectronic Engineering, Chongqing University, Chongqing, China
Funder
Fundamental Research Funds for the Central Universities
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Instrumentation
Link
http://xplorestaging.ieee.org/ielx7/7361/9785401/09758809.pdf?arnumber=9758809
Reference24 articles.
1. Pd and Pt decorated GeSe monolayers as promising materials for SOF2 and SO2F2 sensing
2. Computational design of alkali metals decorated 2D GeSe for hydrogen storage: a first principle study
3. Thermoelectric Performance of Na-Doped GeSe
4. Toxic gases molecules (NH3, SO2 and NO2) adsorption on GeSe monolayer with point defects engineering
5. Efficient iterative schemes forab initiototal-energy calculations using a plane-wave basis set
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