Characterization of Hydrogenated Amorphous Silicon Sensors on Polyimide Flexible Substrate-Reference-Cited by-同舟云学术

Characterization of Hydrogenated Amorphous Silicon Sensors on Polyimide Flexible Substrate

Published:2024-04-15 Issue:8 Volume:24 Page:12466-12471
ISSN:1530-437X
Container-title:IEEE Sensors Journal
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Short-container-title:IEEE Sensors J.

Author:

Menichelli Mauro¹^ORCID,Antognini Luca²^ORCID,Aziz Saba³,Bashiri Aishah⁴^ORCID,Bizzarri Marco¹,Calcagnile Lucio³,Caprai Mirco¹,Caputo Domenico⁵,Caricato Anna Paola³,Catalano Roberto⁶,Chilà Deborah⁷,Cirrone Giuseppe Antonio Pablo⁶,Croci Tommaso¹^ORCID,Cuttone Giacomo⁶,Cesare Giampiero De⁵,Dunand Sylvain²,Fabi Michele⁷^ORCID,Frontini Luca⁸^ORCID,Grimani Catia⁷,Ionica Maria¹,Kanxheri Keida¹,Large Matthew⁴^ORCID,Liberali Valentino⁸^ORCID,Lovecchio Nicola⁵,Martino Maurizio³,Maruccio Giuseppe³^ORCID,Mazza Giovanni⁹,Monteduro Anna Grazia³^ORCID,Morozzi Arianna¹^ORCID,Moscatelli Francesco¹,Nascetti Augusto⁵^ORCID,Pallotta Stefania⁷^ORCID,Papi Andrea¹,Passeri Daniele¹^ORCID,Pedio Maddalena¹,Petasecca Marco⁴^ORCID,Petringa Giada⁶,Peverini Francesca¹,Piccolo Lorenzo⁹,Placidi Pisana¹^ORCID,Quarta Gianluca³^ORCID,Rizzato Silvia³^ORCID,Rossi Giulia¹,Sabbatini Federico⁷^ORCID,Servoli Leonello¹^ORCID,Stabile Alberto⁸,Talamonti Cinzia⁷,Thomet Jonathan Emanuel²^ORCID,Tosti Luca¹,Villani Mattia⁷,Wheadon Richard J.⁹,Wyrsch Nicolas²^ORCID,Zema Nicola¹^ORCID

Affiliation:

1. National Institute of Nuclear Physics (INFN), Perugia, Italy

2. Institute of Electrical and Microengineering (IME), Ecole Polytechnique Fédérale de Lausanne (EPFL), Neuchâtel, Switzerland

3. Dipartimento di Matematica e Fisica, National Institute of Nuclear Physics (INFN), Università del Salento, Lecce, Italy

4. Centre for Medical Radiation Physics, University of Wollongong, Wollongong, NSW, Australia

5. INFN Sezione di Roma, Rome, Italy

6. INFN Laboratori Nazionali del Sud, Catania, Italy

7. INFN Sezione di Firenze, Sesto Fiorentino, Italy

8. INFN Sezione di Milano, Milan, Italy

9. INFN Sezione di Torino, Turin, Italy

Funder

Hydrogenated Amorphous Silicon PIxel DEtector (HASPIDE) project of National Institute of Nuclear Physics (INFN) through Commissione Nazionale Scientifica n.5

“Fondazione Cassa di Risparmio di Perugia” through the RIvelatori al Silicio Amorfo Idrogenato (RISAI) Project

Swiss National Science Foundation

Najran University, Saudi Arabia

Australian Government Research Training Program (AGRTP) Scholarship

Australian Institute of Nuclear Science (AINSE) Post-Graduate Research Award

Programma Operativo Nazionale (PON) Program through the Ph.D. Scholarship

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Link

http://xplorestaging.ieee.org/ielx7/7361/10500449/10443841.pdf?arnumber=10443841

Reference14 articles.

1. Review of amorphous silicon based particle detectors: the quest for single particle detection

2. Amorpiious Silicon Thin Film Transistor and its Applications to Large-Area Electironics

3. Memory switching in amorphous silicon devices

4. Damage mechanisms in radiation-tolerant amorphous silicon solar cells

5. Radiation damage of amorphous silicon photodiode sensors

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