Dark Current and Clock-Induced Charges in a Fully Depleted Charge Domain CDTI-Based CCD-on-CMOS Image Sensor-Reference-Cited by-同舟云学术

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Dark Current and Clock-Induced Charges in a Fully Depleted Charge Domain CDTI-Based CCD-on-CMOS Image Sensor

Published:2024-08-15 Issue:16 Volume:24 Page:25652-25661
ISSN:1530-437X
Container-title:IEEE Sensors Journal
language:
Short-container-title:IEEE Sensors J.

Author:

Salih Alj Antoine¹^ORCID,Touron Pierre²^ORCID,Roy François²^ORCID,Tournier Arnaud²,Michelot Julien³^ORCID,Demiguel Stéphane⁴^ORCID,Virmontois Cédric⁵,Lalucaa Valérian⁵,Magnan Pierre¹,Goiffon Vincent¹^ORCID

Affiliation:

1. ISAE-SUPAERO, Toulouse, France

2. STMicro-electronics, Crolles, France

3. Pyxalis, Moirans, France

4. Thales Alenia Space, Cannes, France

5. Centre National d’Etudes Spatiales (CNES), Toulouse, France

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Link

http://xplorestaging.ieee.org/ielx8/7361/10637303/10600100.pdf?arnumber=10600100

Reference45 articles.

1. Pixel-to-pixel isolation by deep trench technology: Application to CMOS image sensor;Tournier

2. MOS Capacitor Deep Trench Isolation for CMOS image sensors

3. A HDR 98 dB 3.2 µm charge domain global shutter CMOS image sensor;Tournier

4. Fully Depleted, Trench-Pinned Photo Gate for CMOS Image Sensor Applications

5. Trench CCD image sensor

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