CMOS-Compatible Ultraviolet Photodetector Based on p-Nickel-Oxide/ n-Indium-Gallium-Zinc-Oxide Heterojunction Diode-Reference-Cited by-同舟云学术

CMOS-Compatible Ultraviolet Photodetector Based on p-Nickel-Oxide/ n-Indium-Gallium-Zinc-Oxide Heterojunction Diode

Published:2023-07-15 Issue:14 Volume:23 Page:15495-15503
ISSN:1530-437X
Container-title:IEEE Sensors Journal
language:
Short-container-title:IEEE Sensors J.

Author:

Li Huimin¹^ORCID,Zhou Xianda¹,Wang Kai²^ORCID

Affiliation:

1. Guangdong Province Key Laboratory of Display Material and Technology and the State Key Laboratory of Optoelectronic Materials and Technologies, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou, China

2. School of Integrated Circuits, Guangdong University of Technology, Guangzhou, China

Funder

National Key Research and Development Program of China

National Natural Science Foundation of China

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Instrumentation

Link

http://xplorestaging.ieee.org/ielx7/7361/10183770/10144515.pdf?arnumber=10144515

Reference49 articles.

1. Solar-blind deep-UV band-pass filter (250 - 350 nm) consisting of a metal nano-grid fabricated by nanoimprint lithography

2. Silver–silica transparent metal structures as bandpass filters for the ultraviolet range

3. A self-powered high-performance graphene/silicon ultraviolet photodetector with ultra-shallow junction: Breaking the limit of silicon?;wan;NPJ 2D Mater Appl,2017

4. Effects of annealing process on the structural and photodetection properties of new thin-film solar-blind UV sensor based on Si-photonics technology

5. Silicon-Based Visible-Blind Ultraviolet Detection and Imaging Using Down-Shifting Luminophores

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