Single-Crystalline LiNbO₃ Film-Based Piezoelectric Sensors for Ultra-Precision Pressure-Sensing Applications
Author:
Affiliation:
1. School of Electronic and Information Engineering, Soochow University, Suzhou, China
2. Qianyuan Laboratory, Hangzhou, China
Funder
National Key Research and Development Program of China
National Natural Science Foundation of China
Jiangsu Province Natural and Science Foundation
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Link
http://xplorestaging.ieee.org/ielx7/7361/10530892/10495773.pdf?arnumber=10495773
Reference36 articles.
1. Design and fabrication of an absolute pressure MEMS capacitance vacuum sensor based on silicon bonding technology
2. MEMS Shielded Capacitive Pressure and Force Sensors with Excellent Thermal Stability and High Operating Temperature
3. Pressure Sensor with Novel Electrical Circuit Utilizing Bipolar Junction Transistor
4. Design Optimization and Fabrication of a Novel Structural SOI Piezoresistive Pressure Sensor with High Accuracy
5. Development of high-sensitivity piezoresistive pressure sensors for −0.5…+0.5 kPa
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