Design and Simulation of SPR Sensors by Employing Silicon and Silicon-Nitride With Mono and Bimetal Layers for Sensitivity Enhancement-Reference-Cited by-同舟云学术

Design and Simulation of SPR Sensors by Employing Silicon and Silicon-Nitride With Mono and Bimetal Layers for Sensitivity Enhancement

Published:2024-03-15 Issue:6 Volume:24 Page:7671-7680
ISSN:1530-437X
Container-title:IEEE Sensors Journal
language:
Short-container-title:IEEE Sensors J.

Author:

Kumar Shatrughna¹,Yadav Archana²^ORCID,Kumar Santosh³^ORCID,Malomed Boris A.¹

Affiliation:

1. Department of Physical Electronics, School of Electrical Engineering, Faculty of Engineering, and the Center for Light-Matter Interaction, Tel Aviv University, Tel Aviv, Israel

2. Department of Electronics and Communication Engineering, Faculty of Engineering Integral University, Lucknow, Uttar Pradesh, India

3. Department of Electronics and Communication Engineering, K L Deemed to be University, Guntur, Andhra Pradesh, India

Funder

Israel Science Foundation

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Link

http://xplorestaging.ieee.org/ielx7/7361/10472410/10416190.pdf?arnumber=10416190

Reference36 articles.

1. Fast and Broadband Photoresponse of Few-Layer Black Phosphorus Field-Effect Transistors

2. Layer-dependent Band Alignment and Work Function of Few-Layer Phosphorene

3. Biosensors for Odor Detection: A Review

4. Superior Chemical Sensing Performance of Black Phosphorus: Comparison with MoS2and Graphene

5. Present and future of surface plasmon resonance biosensors

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