Design-Oriented Physical Model of Ion-Sensitive Field Effect Transistor for pH Sensing
Author:
Affiliation:
1. Electrical Engineering Department, Amirkabir University of Technology (Tehran Polytechnique), Tehran, Iran
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Instrumentation
Link
http://xplorestaging.ieee.org/ielx7/7361/10032973/09998498.pdf?arnumber=9998498
Reference31 articles.
1. A Physics-Based (Verilog-A) Compact Model for DC, Quasi-Static Transient, Small-Signal, and Noise Analysis of MOSFET-Based pH Sensors
2. A behavioral macromodel of the ISFET in SPICE
3. Study of the electrolyte-insulator-semiconductor field-effect transistor (EISFET) with applications in biosensor design
4. Crossing the Nernst Limit (59 mV/pH) of Sensitivity Through Tunneling Transistor-Based Biosensor
5. Effect of Temperature on the Performance of an Ion-Sensitive Field-Effect Transistor-Type Chemical Sensor with Aluminum Nitride Membrane
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2. Performance Analysis of Open-Gate Junction FET: A New Foundry-Based Silicon Transistor for Biochemical Sensing Applications;IEEE Access;2024
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