Gate drive for high speed, high power IGBTs-Reference-Cited by-同舟云学术

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Gate drive for high speed, high power IGBTs

Published: Issue: Volume: Page:
ISSN:
Container-title:PPPS-2001 Pulsed Power Plasma Science 2001. 28th IEEE International Conference on Plasma Science and 13th IEEE International Pulsed Power Conference. Digest of Papers (Cat. No.01CH37251)
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Author:

Nguyen M.N.,Cassel R.L.,deLamare J.E.,Pappas G.C.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/7852/21618/01001721.pdf?arnumber=1001721

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Fast Switching of GaN Transistors using a Boosted Gate Voltage;2023 25th European Conference on Power Electronics and Applications (EPE'23 ECCE Europe);2023-09-04

2. A Reliable Passive Gate Driver Circuit for IGBT in Traction Applications;2022 2nd Odisha International Conference on Electrical Power Engineering, Communication and Computing Technology (ODICON);2022-11-11

3. Submodule Open-Circuit Fault Detection For Modular Multilevel Converters Under Light Load Condition With Rearranged Bleeding Resistor Circuit;IEEE Transactions on Power Electronics;2022-04

4. Intelligent Hybrid Gate Driver Design With Self-Adjusting Parameters for Short Circuit Protection;2021 23rd European Conference on Power Electronics and Applications (EPE'21 ECCE Europe);2021-09-06

5. Open‐phase fault tolerant driving operation of dual‐inverter‐based traction drive;IET Electric Power Applications;2021-03-11

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