Author:
Ranjan Sanjeev,Majumder Saikat,Naugarhiya Alok
Cited by
7 articles.
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1. SEGR Analysis of SJ_IGBT with High-k Gate Dielectrics for Radiation Environment;2023 World Conference on Communication & Computing (WCONF);2023-07-14
2. SEGR and SEB Analysis of SJVDMOS using SiO2/Si3N4 as Gate Dielectric with Buffer layer;2023 2nd International Conference on Paradigm Shifts in Communications Embedded Systems, Machine Learning and Signal Processing (PCEMS);2023-04-05
3. Analysis of Gate Oxides in LDMOS for Radiation Hardening Against SEGR;2022 International Conference on Intelligent Controller and Computing for Smart Power (ICICCSP);2022-07-21
4. SEGR Analysis of Super Junction VDMOS using HfO2 as Gate Dielectric;2022 Second International Conference on Advances in Electrical, Computing, Communication and Sustainable Technologies (ICAECT);2022-04-21
5. Analysis of Single Event Gate Rupture in Trench Gate SJ-VDMOS with SiO2-Si3N4 Dielectric Stacking;2021 IEEE Region 10 Symposium (TENSYMP);2021-08-23