Development of a New pHEMT-Based Electrostatic Discharge Protection Structure-Reference-Cited by-同舟云学术

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Development of a New pHEMT-Based Electrostatic Discharge Protection Structure

Published:2011-09 Issue:9 Volume:58 Page:2974-2980
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Cui Qiang,Cheng Chia-Shih,Liou Juin J.,Chiu Hsien-Chin

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/16/5993779/05783339.pdf?arnumber=5783339

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Incorporation of a Simple ESD Circuit in a 650V E-Mode GaN HEMT for All-Terminal ESD Protection;2022 IEEE International Reliability Physics Symposium (IRPS);2022-03

2. A Dual-MOS-Triggered Silicon-Controlled Rectifier for High-Voltage ESD Protection;IEEE Journal of Emerging and Selected Topics in Power Electronics;2021-10

3. A compact LDMOS DDSCR for HV ESD protections with high robustness and reliability;Solid-State Electronics;2019-11

4. Area-Efficient and Low-Leakage Diode String for On-Chip ESD Protection;IEEE Transactions on Electron Devices;2016-02

5. Development of an Electrostatic Discharge Protection Solution in GaN Technology;IEEE Electron Device Letters;2013-12

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