Physics-Based Modeling of GaN HEMTs-Reference-Cited by-同舟云学术

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Physics-Based Modeling of GaN HEMTs

Published:2012-03 Issue:3 Volume:59 Page:685-693
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Vitanov Stanislav¹,Palankovski Vassil¹,Maroldt Stephan²,Quay Rüdiger²,Murad Saad³,Rodle Thomas³,Selberherr Siegfried⁴

Affiliation:

1. Advanced Materials and Device Analysis Group, Institut für Mikroelektronik, Technische Universität Wien, Vienna, Austria

2. Fraunhofer Institute for Applied Solid-State Physics, Freiburg, Germany

3. NXP Semiconductors, Nijmegen, The Netherlands

4. Institut für Mikroelektronik, Technische Universität Wien, Vienna, Austria

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/16/6155188/06140556.pdf?arnumber=6140556

Cited by 38 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. The improvement of device linearity in AlGaN/GaN HEMTs at millimeter-wave frequencies using dual-gate configuration;Results in Physics;2024-04

2. Bias-Dependent Electron Velocity Extracted From AlGaN/GaN HFETs and Its Impact on g _m and f _T;IEEE Electron Device Letters;2024-02

3. Modeling approaches for GaN HEMTs;GaN Transistor Modeling for RF and Power Electronics;2024

4. Estimation of the Ku-band accuracy of a simplified equivalent circuit for a Schottky gate SiN/AlGaN/GaN HEMT;2023-09-07

5. A study of DC and RF transconductance for different technologies of HEMT at low and high temperatures;Journal of Materials Science: Materials in Electronics;2023-04

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