Bistable RF switches using Ge2Sb2Te5 phase change material
Author:
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/7331835/7345669/07345920.pdf?arnumber=7345920
Cited by 22 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. A Tale of Two Phases: An Overview of Phase-Change Material RF Switch Technology: Sub-20-fs RON*COFF RF Switch Technology for the Mm-Wave and 5G/6G Revolutions;IEEE Microwave Magazine;2024-08
2. Study on Resistance of Crystalline GeTe Thin Films and Enhancement on Electrical Properties of Phase Change Switch;IEEE Transactions on Electron Devices;2024-07
3. A Review on Material Selection Benchmarking in GeTe-Based RF Phase-Change Switches for Each Layer;Micromachines;2024-03-13
4. Unleashing Next-Gen Innovations: Phase-Change Materials for RF and Acoustic Devices [From the Guest Editors’ Desk];IEEE Microwave Magazine;2024-02
5. Phase-Change RF Devices for Future Communications: Phase-Change Materials and Devices for Reconfigurable RF Front-Ends: State-of-the-Art and Future Perspectives;IEEE Microwave Magazine;2024-02
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