Packaged AlGaN/GaN HEMT power bars with 900 W output power and high PAE at L-band
Author:
Affiliation:
1. Fraunhofer Institute for Applied Solid State Physics IAF, Tullastr. 72, D-79108 Freiburg, Germany
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/7805383/7824247/07824366.pdf?arnumber=7824366
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Comparative analysis of nonlinear behavioral models for GaN HEMTs based on machine learning techniques;International Journal of Numerical Modelling: Electronic Networks, Devices and Fields;2023-09-29
2. 200-W GaN PA Design Based on Accurate Multicell Transistor Modeling;2022 IEEE/MTT-S International Microwave Symposium - IMS 2022;2022-06-19
3. A New Modeling Technique for Microwave Multicell Transistors Based on EM Simulations;IEEE Transactions on Microwave Theory and Techniques;2020-07
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