A unified 3D device simulation of random dopant, interface trap and work function fluctuations on high-к/metal gate device
Author:
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx5/6123666/6131464/06131495.pdf?arnumber=6131495
Cited by 7 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
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3. A Hybrid 1D-CNN-LSTM Technique for WKF-Induced Variability of Multi-Channel GAA NS- and NF-FETs;IEEE Access;2023
4. Cryogenic In-Memory Computing for Quantum Processors Using Commercial 5-nm FinFETs;IEEE Open Journal of Circuits and Systems;2023
5. A Machine Learning Approach to Modeling Intrinsic Parameter Fluctuation of Gate-All-Around Si Nanosheet MOSFETs;IEEE Access;2022
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