Characterization of traps and trap-related effects in recessed-gate normally-off AlGaN/GaN-based MOSHEMT-Reference-Cited by-同舟云学术

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Characterization of traps and trap-related effects in recessed-gate normally-off AlGaN/GaN-based MOSHEMT

Published:2012-12 Issue: Volume: Page:
ISSN:
Container-title:2012 International Electron Devices Meeting
language:
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Author:

Bae Jong-Ho,Hwang Injun,Shin Jong-Min,Kwon Hyuck-In,Park Chan Hyeong,Ha Jongbong,Lee JaeWon,Choi Hyoji,Kim Jongseob,Park Jong-Bong,Oh Jaejoon,Shin Jaikwang,Chung U-In,Lee Jong-Ho

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/6471855/6478950/06479034.pdf?arnumber=6479034

Cited by 15 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

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3. A Rigorous Investigation of Electrostatic and Transport Phenomena of GaN Double-Channel HEMT;IEEE Transactions on Electron Devices;2019-07

4. Tunable Low-Frequency Noise in Dual-Gate MoS2Transistors;IEEE Electron Device Letters;2018-01

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