MOS interface and channel engineering for high-mobility Ge/III-V CMOS
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Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/6471855/6478950/06479085.pdf?arnumber=6479085
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4. Impact of metal gate electrodes on electrical properties of Y2O3/Si0.78Ge0.22 gate stacks;Microelectronic Engineering;2019-06
5. Analysis of III–V oxides at high-k/InGaAs interfaces induced by metal electrodes;Japanese Journal of Applied Physics;2019-04-10
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