High performance gallium-zinc oxynitride thin film transistors for next-generation display applications-Reference-Cited by-同舟云学术

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High performance gallium-zinc oxynitride thin film transistors for next-generation display applications

Published:2013-12 Issue: Volume: Page:
ISSN:
Container-title:2013 IEEE International Electron Devices Meeting
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Author:

Kim Tae Sang,Kim Hyun-Suk,Park Joon Seok,Son Kyoung Seok,Kim Eok Su,Seon Jong-Baek,Lee Sunhee,Seo Seok-Jun,Kim Sun-Jae,Jun Sungwoo,Lee Kyung Min,Shin Dong Jae,Lee Jaewook,Jo Chunhyung,Choi Sung-Jin,Kim Dong Myong,Kim Dae Hwan,Ryu Myungkwan,Cho Seong-Ho,Park Youngsoo

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/6709840/6724533/06724701.pdf?arnumber=6724701

Cited by 10 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. In Situ IGZO/ZnON Phototransistor Free of Persistent Photoconductivity with Enlarged Spectral Responses;ACS Applied Electronic Materials;2022-12-30

2. Control of Band Gap and Band Edge Positions in Gallium–Zinc Oxynitride Grown by Molecular Beam Epitaxy;The Journal of Physical Chemistry C;2020-03-18

3. The Influence of Anion Composition on Subgap Density of States and Electrical Characteristics in ZnON Thin-Film Transistors;IEEE Electron Device Letters;2019-01

4. Remarkably High Hole Mobility Metal-Oxide Thin-Film Transistors;Scientific Reports;2018-01-17

5. Remarkably High Mobility Thin-Film Transistor on Flexible Substrate by Novel Passivation Material;Scientific Reports;2017-04-25

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