TMD FinFET with 4 nm thin body and back gate control for future low power technology

Author:

Chen Min-Cheng,Li Kai-Shin,Li Lain-Jong,Lu Ang-Yu,Li Ming-Yang,Chang Yung-Huang,Lin Chang-Hsien,Chen Yi-Ju,Hou Yun-Fang,Chen Chun-Chi,Wu Bo-Wei,Wu Cheng-San,Yang Ivy,Lee Yao-Jen,Shieh Jia-Min,Yeh Wen-Kuan,Shih Jyun-Hong,Su Po-Cheng,Sachid Angada B.,Wang Tahui,Yang Fu-Liang,Hu Chenming

Publisher

IEEE

Cited by 25 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. The future of two-dimensional semiconductors beyond Moore’s law;Nature Nanotechnology;2024-07

2. Integrated 2D multi-fin field-effect transistors;Nature Communications;2024-04-29

3. Optimized Vedic Multiplier Using 3nm Nanosheet Technology;2024 International Conference on Emerging Smart Computing and Informatics (ESCI);2024-03-05

4. Investigation on Contact Properties of 2D van der Waals Semimetallic 1T-TiS2/MoS2 Heterojunctions;ACS Applied Materials & Interfaces;2024-02-22

5. Subthreshold Swing Model of GaN-Based Fin-Gate High Electron Mobility Transistors;2023 20th China International Forum on Solid State Lighting & 2023 9th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS);2023-11-27

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