Innovative ESD protections for UTBB FD-SOI technology-Reference-Cited by-同舟云学术

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Innovative ESD protections for UTBB FD-SOI technology

Published:2013-12 Issue: Volume: Page:
ISSN:
Container-title:2013 IEEE International Electron Devices Meeting
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Author:

Solaro Yohann,Fonteneau Pascal,Legrand Charles-Alexandre,Marin-Cudraz David,Passieux Jeremy,Guyader Pascal,Clement Laurent-Renaud,Fenouillet-Beranger Claire,Ferrari Philippe,Cristoloveanu Sorin

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/6709840/6724533/06724580.pdf?arnumber=6724580

Cited by 12 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Robustness-Improved ESD Protection Devices With Low Leakage Using Middle Silicon Layer in Double SOI Technology;IEEE Transactions on Electron Devices;2024-06

2. A Simulation Study of Bipolar I-MOS for ESD Protection;IEEE Transactions on Electron Devices;2023-12

3. Gate Grounded Trench I-MOS as an ESD Clamp for Sub-2V Applications;IEEE Access;2023

4. Bulk Field Effect Diode;IEEE Transactions on Electron Devices;2022-09

5. Sharp Logic Switch Based on Band Modulation;IEEE Electron Device Letters;2019-11

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