Progress in ultrahigh-voltage SiC devices for future power infrastructure-Reference-Cited by-同舟云学术

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Progress in ultrahigh-voltage SiC devices for future power infrastructure

Published:2014-12 Issue: Volume: Page:
ISSN:
Container-title:2014 IEEE International Electron Devices Meeting
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Author:

Kimoto T.,Suda J.,Yonezawa Y.,Asano K.,Fukuda K.,Okumura H.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/7038718/7046955/07046967.pdf?arnumber=7046967

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A 4H-SiC p-channel insulated gate bipolar transistor with higher breakdown voltage and superior V _F·C _res figure of merit;Japanese Journal of Applied Physics;2024-02-05

2. High-voltage SiC power devices for improved energy efficiency;Proceedings of the Japan Academy, Series B;2022-04-11

3. SiC power device design and fabrication;Wide Bandgap Semiconductor Power Devices;2019

4. Carrier lifetime and breakdown phenomena in SiC power device material;Journal of Physics D: Applied Physics;2018-07-30

5. Analytical Model for the Influence of the Gate-Voltage on the Forward Conduction Properties of the Body-Diode in SiC-MOSFETs;Materials Science Forum;2018-06

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