Microsecond transient thermal behavior of HfOx-based resistive random access memory using a micro thermal stage (MTS)-Reference-Cited by-同舟云学术

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Microsecond transient thermal behavior of HfOx-based resistive random access memory using a micro thermal stage (MTS)

Published:2016-12 Issue: Volume: Page:
ISSN:
Container-title:2016 IEEE International Electron Devices Meeting (IEDM)
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Author:

Jiang Zizhen,Wang Ziwen,Zheng Xin,Fong Scott,Qin Shengjun,Chen Hong-Yu,Ahn Chiyui,Cao Ji,Nishi Yoshio,Wong H.-S. Philip

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/7824662/7838021/07838465.pdf?arnumber=7838465

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