Application reliability validation of GaN power devices
Author:
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/7824662/7838021/07838461.pdf?arnumber=7838461
Cited by 12 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. On-Chip Concurrent Device Aging Prognosis and Dielectric Failure Detection for GaN Power Devices;IEEE Transactions on Power Electronics;2024-09
2. Chip-Level Condition Monitoring on Wide Bandgap Power Devices: Challenges & Opportunities;2024 International VLSI Symposium on Technology, Systems and Applications (VLSI TSA);2024-04-22
3. Compact Modeling of Power GaN Fin-JFETs I-V Characteristics using ASM-HEMT Model;2024 IEEE Texas Power and Energy Conference (TPEC);2024-02-12
4. ADS SpE Fr High Efficiency, Versatile and Space Tolerant Point Of Load;2023 European Data Handling & Data Processing Conference (EDHPC);2023-10-02
5. Characterization of Electrical Switching Safe Operation Area on Schottky-Type P-GaN Gate HEMTs;IEEE Transactions on Power Electronics;2023-07
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