STT-MRAM devices with low damping and moment optimized for LLC applications at Ox nodes-Reference-Cited by-同舟云学术

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STT-MRAM devices with low damping and moment optimized for LLC applications at Ox nodes

Published:2018-12 Issue: Volume: Page:
ISSN:
Container-title:2018 IEEE International Electron Devices Meeting (IEDM)
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Author:

Thomas Luc,Jan Guenole,Serrano-Guisan Santiago,Liu Huanlong,Zhu Jian,Lee Yuan-Jen,Le Son,Iwata-Harms Jodi,Tong Ru-Ying,Patel Sahil,Sundar Vignesh,Shen Dongna,Yang Yi,He Renren,Haq Jesmin,Teng Zhongjian,Lam Vinh,Liu Paul,Wang Yu-Jen,Zhong Tom,Fukuzawa Hideaki,Wang PoKang

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/8601505/8614478/08614700.pdf?arnumber=8614700

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