A high performance phase change memory with fast switching speed and high temperature retention by engineering the Ge<inf>x</inf>Sb<inf>y</inf>Te<inf>z</inf> phase change material-Reference-Cited by-同舟云学术

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A high performance phase change memory with fast switching speed and high temperature retention by engineering the GexSbyTez phase change material

Published:2011-12 Issue: Volume: Page:
ISSN:
Container-title:2011 International Electron Devices Meeting
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Author:

Cheng H. Y.,Hsu T. H.,Raoux S.,Wu J.Y.,Du P. Y.,Breitwisch M.,Zhu Y.,Lai E. K.,Joseph E.,Mittal S.,Cheek R.,Schrott A.,Lai S. C.,Lung H. L.,Lam C.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/6123666/6131464/06131481.pdf?arnumber=6131481

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