Atomic-level engineering of phase change material for novel fast-switching and high-endurance PCM for storage class memory application
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Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/6709840/6724533/06724726.pdf?arnumber=6724726
Cited by 14 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
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2. New phase-change materials for photonic computing and beyond;Phase Change Materials-Based Photonic Computing;2024
3. MC-ELMM: Multi-Chip Endurance-Limited Memory Management;Proceedings of the International Symposium on Memory Systems;2023-10-02
4. Emerging Memory Technologies for Data Storage and Brain-Inspired Computation: A Global View with Indian Research Insights with a Focus on Resistive Memories;Proceedings of the National Academy of Sciences, India Section A: Physical Sciences;2023-06-04
5. Universal memory based on phase-change materials: From phase-change random access memory to optoelectronic hybrid storage*;Chinese Physics B;2021-05-01
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