A 44-GHz high IP3 InP-HBT amplifier with practical current reuse biasing

Author:

Kobayashi K.W.,Nishimoto M.,Tran L.T.,Huei Wang ,Cowles J.C.,Block T.R.,Elliott J.H.,Allen B.R.,Oki A.K.,Streit D.C.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Radiation

Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. High Linearity Ka-band InP HBT MMIC Amplifier with 19.8:1 IP3/Pdc LFOM at 48 GHz;2022 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS);2022-10-16

2. A Combined Model With Electrothermal Coupling and Electromagnetic Simulation for Microwave Multifinger InP-Based DHBTs;IEEE Transactions on Electron Devices;2012-03

3. Millimeter-Wave Integrated Circuits;Encyclopedia of RF and Microwave Engineering;2005-04-15

4. A 44-GHz-high IP3 InP HBT MMIC amplifier for low DC power millimeter-wave receiver applications;IEEE Journal of Solid-State Circuits;1999

5. Advances in millimeter-wave FET MMIC technology;1999 IEEE Radio Frequency Integrated Circuits Symposium (Cat No.99CH37001)

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