Comparative Analysis on Switching Characteristics of Discrete SiC MOSFET in Press-pack Package and Wire-bonded Package-Reference-Cited by-同舟云学术

Comparative Analysis on Switching Characteristics of Discrete SiC MOSFET in Press-pack Package and Wire-bonded Package

Published:2022-11-04 Issue: Volume: Page:
ISSN:
Container-title:2022 IEEE International Power Electronics and Application Conference and Exposition (PEAC)
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Author:

Zhu Zheyan¹,Yao Ran¹,Li Hui¹,Li Jinyuan²,Chen Zhongyuan²

Affiliation:

1. Chong Qing University,State Key Laboratory of Power Transmission Equipment & System Security and New Technology,Chongqing,China

2. Beijing Institude of Smart Energy,State Key Laboratory of Advanced Power Transmission Technology,Beijing,China

Funder

Science and Technology Project of State Grid

National Science Foundation

Fundamental Research Funds for the Central Universities

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9958944/9959090/09959610.pdf?arnumber=9959610

Reference14 articles.

1. Compact sandwiched press-pack SiC power module with low stray inductance and balanced thermal stress[J];chang;IEEE Transactions on Power Electronics,2019

2. Study on the method to measure thermal contact resistance within press pack IGBTs[J];erping;IEEE Transactions on Power Electronics,2018

3. Comprehensive investigation on current imbalance among parallel chips inside MW-scale IGBT power modules[C];rui;IEEE International Conference on Power Electronics - ECCE Asia,2015

4. Comparative study on multiple degrees of freedom of gate drivers for transient behavior regulation of SiC MOSFET[J];zeng;IEEE Transactions on Power Electronics,2017

5. Impact of common source inductance on switching loss of SiC MOSFET[J];zezheng;Journal of Power Supply,2016

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