Improved read voltage margins with alternative topologies for memristor-based crossbar memories

Author:

Vourkas Ioannis,Stathis Dimitrios,Sirakoulis Georgios Ch.

Publisher

IEEE

Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Direct-Write NiO RRAM Cells;2024 IEEE 74th Electronic Components and Technology Conference (ECTC);2024-05-28

2. Reliability-Aware Ratioed Logic Operations for Energy-Efficient Computational ReRAM;2022 IFIP/IEEE 30th International Conference on Very Large Scale Integration (VLSI-SoC);2022-10-03

3. Memristor-Based Volistor Gates Compute Logic with Low Power Consumption;BioNanoScience;2016-08-15

4. Alternative Architectures Toward Reliable Memristive Crossbar Memories;IEEE Transactions on Very Large Scale Integration (VLSI) Systems;2016-01

5. Memristive Crossbar-Based Nonvolatile Memory;Emergence, Complexity and Computation;2015-08-27

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