A 3.5~7.5 GHz GaAs HEMT Cryogenic Low-NoiseAmplifier Achieving 5 Kelvin Noise Temperature for Qubits Measurement
Author:
Affiliation:
1. University of Macau,State Key Lab. of Analog and Mixed-Signal VLSI, IME/ECE of FST,China
2. Shenzhen International Quantum Academy,China
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10187888/10187785/10188012.pdf?arnumber=10188012
Reference12 articles.
1. Temperature-dependent modeling of gallium arsenide MESFETs
2. Superconducting Parametric Amplifiers: The State of the Art in Josephson Parametric Amplifiers
3. A quantum engineer’s guide to superconducting qubits;krantz;Appl Phys Rev,2019
4. Cryogenic Modeling of GaAs-pHEMT and its Application in Low-power MMIC CLNA Design for Radio Astronomy
5. Cryogenic 8–18 GHz MMIC LNA using GaAs PHEMT
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Improved Thermal Performance of InGaAs/GaAs Nanomembrane HEMTs Transferred onto Various Substrates by Epitaxial Lift-Off;ACS Applied Electronic Materials;2024-07-19
2. Cryogenic CMOS RF Circuits: A Promising Approach for Large-Scale Quantum Computing;IEEE Transactions on Circuits and Systems II: Express Briefs;2023
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