Optimization of MOVPE grown In/sub x/Al/sub 1-x/As/In/sub 0.53/Ga/sub 0.47/As planar heteroepitaxial Schottky diodes for terahertz applications-Reference-Cited by-同舟云学术

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Optimization of MOVPE grown In/sub x/Al/sub 1-x/As/In/sub 0.53/Ga/sub 0.47/As planar heteroepitaxial Schottky diodes for terahertz applications

Published:1994 Issue:9 Volume:41 Page:1489-1497
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Kyushik Hong ,Marsh P.F.,Geok-Ing Ng ,Pavlidis D.,Chang-Hee Hong

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx1/16/7519/00310098.pdf?arnumber=310098

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. GaN Multipliers;Fundamentals of Terahertz Devices and Applications;2021-07-12

2. Design Guidelines for Recessed Schottky Barrier AlN/GaN Diode for THz Applications;IEEE Transactions on Electron Devices;2021-05

3. Electronic devices for nonlinear applications at terahertz frequency;SPIE Proceedings;1999-09-09

4. Step-like heterostructure barrier varactor;IEEE Transactions on Electron Devices;1998

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