Second-Order Nonlinearity of Excitons in hBN-Encapsulated Monolayer Transition Metal Dichalcogenides-Reference-Cited by-同舟云学术

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Second-Order Nonlinearity of Excitons in hBN-Encapsulated Monolayer Transition Metal Dichalcogenides

Published:2023-06-26 Issue: Volume: Page:
ISSN:
Container-title:2023 Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference (CLEO/Europe-EQEC)
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Author:

Takahashi Shinya¹,Kusaba Satoshi¹,Watanabe Kenji²,Taniguchi Takashi³,Yanagi Kazuhiro⁴,Tanaka Koichiro¹

Affiliation:

1. Kyoto University,Department of Physics,Kyoto,Japan,606-8502

2. National Institute for Materials Science,Research Center for Functional Materials,Tsukuba,Ibaraki,Japan,305-0044

3. National Institute for Materials Science,International Center for Materials Nanoarchitectonics,Tsukuba,Ibaraki,Japan,305-0044

4. Tokyo Metropolitan University,Department of Physics,Hachioji, Tokyo,Japan,192-0397

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10231377/10231353/10231504.pdf?arnumber=10231504

Reference9 articles.

1. Foldy-Wouthuysen transformation for gapped Dirac fermions in two-dimensional semiconducting materials and valley excitons under external fields;chang;ArXiv,2021

2. Broadband sum frequency generation spectroscopy of dark exciton states in hBN-encapsulated monolayer WSe2

3. Theory of Excitons in Atomically Thin Semiconductors: Tight-Binding Approach

4. Magnetooptics of Exciton Rydberg States in a Monolayer Semiconductor

5. Coulomb interaction in thin semiconductor and semimetal films;keldysh;JETP Lett,1979

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