GaN for power devices: Benefits, applications, and normally-off technologies-Reference-Cited by-同舟云学术

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GaN for power devices: Benefits, applications, and normally-off technologies

Published:2017-10 Issue: Volume: Page:
ISSN:
Container-title:2017 International Semiconductor Conference (CAS)
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Author:

Longobardi G.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/8090484/8101129/08101144.pdf?arnumber=8101144

Cited by 16 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Experimental Insights into the Role of Inter-valley and Defect Transitions of Hot Electrons in Determining Self-heating in AlGaN/GaN HEMTs;2024 IEEE International Reliability Physics Symposium (IRPS);2024-04-14

2. Effect of Mismatch in Frequency of Gate Pulses on Inductor Current Ripple in Coupled Inductor SIDO Boost Converter;2023 11th National Power Electronics Conference (NPEC);2023-12-14

3. Structural, electrical, morphological, and interfacial characteristics of lattice-matched InAlN/GaN HEMT structure on SiC substrate;Journal of Applied Physics;2023-10-09

4. Integrated GaN digital soft start-up for switching power converters;2023 18th Conference on Ph.D Research in Microelectronics and Electronics (PRIME);2023-06-18

5. Role of two-dimensional electron gas (2DEG) in GaN/AlGaN avalanche transit time (ATT) oscillator for RF performance boosting: application in THz opto-electronics;Microsystem Technologies;2023-06-04

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