Origins of total-dose response variability in linear bipolar microcircuits

Author:

Barnaby H.J.,Cirba C.R.,Schrimpf R.D.,Fleetwood D.M.,Pease R.L.,Shaneyfelt M.R.,Turflinger T.,Krieg J.F.,Maher M.C.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Nuclear Energy and Engineering,Nuclear and High Energy Physics

Cited by 25 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Short-term Recovery Effect in a Power Integrated Circuit Exposed to X-Rays;2023 IEEE 33rd International Conference on Microelectronics (MIEL);2023-10-16

2. Predictive study on a bipolar operational amplifier behaviour under gamma and protons radiation;2022 22nd European Conference on Radiation and Its Effects on Components and Systems (RADECS);2022-10-03

3. Effects of Bias and Temperature on Interface-Trap Annealing in MOS and Linear Bipolar Devices;IEEE Transactions on Nuclear Science;2022-03

4. Linear dependence of post-irradiation input bias currents on pre-irradiation values in silicon bipolar microcircuits;Microelectronics Reliability;2021-08

5. Variability in Total-Ionizing-Dose Response of Fourth-Generation SiGe HBTs;IEEE Transactions on Nuclear Science;2021-05

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