Design of Transimpedance Amplifier using CMOS 180nm Technology-Reference-Cited by-同舟云学术

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Design of Transimpedance Amplifier using CMOS 180nm Technology

Published:2022-04-21 Issue: Volume: Page:
ISSN:
Container-title:2022 Second International Conference on Advances in Electrical, Computing, Communication and Sustainable Technologies (ICAECT)
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Author:

Malhotra Megha¹,Gamad R. S.¹,Gurjar R. C.¹,Soni Gireesh Gaurav

Affiliation:

1. Shri G. S. Institute of Technology and Science,Dept. of Electronics and Instrumentation Engineering,Indore,India

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9807685/9807649/09808032.pdf?arnumber=9808032

Reference11 articles.

1. Design of a CMOS Broadband Transimpedance Amplifier with Floating Active Inductor

2. A 53-Gbit/s Optical Receiver Frontend With 0.65 pJ/bit in 28-nm Bulk-CMOS

3. A 10-Gb/s Optical Receiver With Sub-Microampere Input-Referred Noise

4. Cross-Coupled Current Conveyor Based CMOS Transimpedance Amplifier for Broadband Data Transmission

5. Chip-scale optical resonator enabled synthesizer (CORES) miniature systems for optical frequency synthesis

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