CMOS Temperature Sensor Utilizing Gate-length-based Threshold Voltage Modulation
Author:
Affiliation:
1. Kyoto University Kyoto Daigaku Katsura, Nishikyo-ku,Graduate School of Engineering,Department of Electrical Engineering,Kyoto,JAPAN,615-8510
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10198027/10198028/10198111.pdf?arnumber=10198111
Reference7 articles.
1. Wide-range and low supply dependency MOSFET-based temperature sensor utilizing statistical properties of scaled MOSFETs
2. An 11-nW CMOS Temperature-to-Digital Converter Utilizing Sub-Threshold Current at Sub-Thermal Drain Voltage
3. A 0.4V 280-nW frequency reference-less nearly all-digital hybrid domain temperature sensor
4. A process scalable voltage-reference-free temperature sensor utilizing MOSFET threshold voltage variation
5. A +0.44°C/−0.4°C Inaccuracy Temperature Sensor With Multi-Threshold MOSFET-Based Sensing Element and CMOS Thyristor-Based VCO
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