A Partial Discharge Inception Voltage Modeling Approach-Reference-Cited by-同舟云学术

A Partial Discharge Inception Voltage Modeling Approach

Published:2023 Issue: Volume:4 Page:148-160
ISSN:2644-1314
Container-title:IEEE Open Journal of Power Electronics
language:
Short-container-title:IEEE Open J. Power Electron.

Author:

Mukherjee Shilpi¹^ORCID,Evans Tristan M.²^ORCID,Huitink David R.³^ORCID,Mantooth H. Alan²^ORCID

Affiliation:

1. Materials Science and Engineering Graduate Program, University of Arkansas, Fayetteville, AR, USA

2. Department of Electrical Engineering, University of Arkansas, Fayetteville, AR, USA

3. Department of Mechanical Engineering, University of Arkansas, Fayetteville, AR, USA

Funder

Army Research Laboratory

National Science Foundation Engineering Research Center

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering

Link

https://ieeexplore.ieee.org/ielam/8782709/10004734/10035407-aam.pdf

Reference37 articles.

1. High Performance Silicon Carbide Power Packaging—Past Trends, Present Practices, and Future Directions

2. Packaging SiC power semiconductors — Challenges, technologies and strategies

3. Design and validation of a high-density 10 kV silicon carbide MOSFET power module with reduced electric field strength and integrated common-mode screen;DiMarino,2018

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