Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Nuclear Energy and Engineering,Nuclear and High Energy Physics
Cited by
12 articles.
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1. Total Ionizing Dose Hardness Enhancement at Room Temperature in CMOS 0.25µm Technology;2020 20th European Conference on Radiation and Its Effects on Components and Systems (RADECS);2020-10
2. Total ionizing dose (TID) effect and single event effect (SEE) in quasi-SOI nMOSFETs;Semiconductor Science and Technology;2013-12-20
3. Oxide Traps, Border Traps, and Interface Traps in SiO2;Defects in Microelectronic Materials and Devices;2008-11-19
4. Mechanisms of spontaneous recovery in DC gate bias stressed power VDMOSFETs;IET Circuits, Devices & Systems;2008
5. Total-ionizing-dose effects on isolation oxides in modern CMOS technologies;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2007-08