Modeling boron diffusion in ultrathin nitrided oxide p/sup +/ Si gate technology
Author:
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx1/55/12678/00585342.pdf?arnumber=585342
Cited by 11 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Dielectric Evolution Characteristics of HfCN Metal-Electrode-Gated MOS Stacks;Journal of The Electrochemical Society;2007
2. Effect of NH3 on the fabrication of HfN as gate-electrode using MOCVD;Thin Solid Films;2006-03
3. Interface structure of HfNx/SiO2 stack grown by MOCVD using TDEAHf precursor;Surface Science;2005-08
4. Electrical and Thermal Stability Characteristics of HfCN Films as Metal Gate-Electrode Synthesized by Metalorganic Chemical Vapor Deposition;Japanese Journal of Applied Physics;2005-07-29
5. Oxidation of nitrogen-implanted silicon: Energy dependence of oxide growth and defect characterization of the silicon substrate;Journal of Applied Physics;2003-02
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