A reduced-field design concept for high-performance bipolar transistors-Reference-Cited by-同舟云学术

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A reduced-field design concept for high-performance bipolar transistors

Published:1989-02 Issue:2 Volume:10 Page:67-69
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Tang D.D.,Lu P.-F.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx1/55/1408/00032431.pdf?arnumber=32431

Cited by 23 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Bipolar Technology;VLSI Technology;2003-03-19

2. Epitaxy and device behaviour of collector-up SiGe HBTs with a partial p-type collector;Solid-State Electronics;2001-11

3. A better insight into the performance of silicon BJTs featuring highly nonuniform collector doping profiles;IEEE Transactions on Electron Devices;2000-05

4. Optimum collector width of VLSI bipolar transistors for maximum f/sub max/ at high current densities;IEEE Transactions on Electron Devices;1997-05

5. Bounds on bipolar transistor base transit time;International Journal of Electronics;1996-12

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