Modeling, Design, Assessment of a 0.4 $\mu{\hbox {m}}$ SiGe Bipolar VCSEL Driver IC Under $\gamma $-Radiation
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Published:2009-08
Issue:4
Volume:56
Page:1920-1925
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ISSN:0018-9499
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Container-title:IEEE Transactions on Nuclear Science
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language:
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Short-container-title:IEEE Trans. Nucl. Sci.
Author:
Leroux Paul,De Cock Wouter,Van Uffelen Marco,Steyaert Michiel
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Nuclear Energy and Engineering,Nuclear and High Energy Physics
Cited by
1 articles.
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1. Radiation Effects in SiGe Technology;IEEE Transactions on Nuclear Science;2013-06