Strained Si/SiGe Channel With Buried $\hbox{Si}_{0.99}\hbox{C}_{0.01}$ for Improved Drivability, Gate Stack Integrity and Noise Performance-Reference-Cited by-同舟云学术

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Strained Si/SiGe Channel With Buried $\hbox{Si}_{0.99}\hbox{C}_{0.01}$ for Improved Drivability, Gate Stack Integrity and Noise Performance

Published:2007 Issue:12 Volume:54 Page:3292-3298
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Loh Wei-Yip,Zang Hui,Oh Hoon-Jung,Choi Kyu-Jin,Nguyen Hoai Son,Lo Guo-Qiang,Cho Byung Jin

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/16/4383014/04383042.pdf?arnumber=4383042

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Assessment of temperature and ITCs on single gate L-shaped tunnel FET for low power high frequency application;Engineering Research Express;2024-03-01

2. Improved Electrical Characteristics of Bulk FinFETs With SiGe Super-Lattice-Like Buried Channel;IEEE Electron Device Letters;2019-02

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