Analog/RF Performance of Si Nanowire MOSFETs and the Impact of Process Variation

Author:

Runsheng Wang ,Jing Zhuge ,Ru Huang ,Yu Tian ,Han Xiao ,Liangliang Zhang ,Chen Li ,Xing Zhang ,Yangyuan Wang

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Cited by 77 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Temperature Analysis of DMGC CGAA FET for Future Deep Space and Military Applications: An Insight into Analog/RF/Self-Heating/Linearity;ECS Journal of Solid State Science and Technology;2023-08-01

2. Analytical model for junctionless accumulation‐mode cylindrical surrounding gate (JAM‐CSG) MOSFET as a biosensor;International Journal of Numerical Modelling: Electronic Networks, Devices and Fields;2023-01-30

3. Analytical Comparison of the Impact of Si and GaAs as Materials in Designing 3D Density Gradient Nanowire MOSFET for Low Power Applications;2023 3rd International Conference on Robotics, Electrical and Signal Processing Techniques (ICREST);2023-01-07

4. Small-Signal RF response of dual metal gate (DMG) junctionless accumulation mode (JAM) nanowire FET (NWFET);PROCEEDINGS OF THE 4TH INTERNATIONAL COMPUTER SCIENCES AND INFORMATICS CONFERENCE (ICSIC 2022);2023

5. Radio Frequency Stability Performance of Silicon Nanowire Transistor;Multigate Transistors for High Frequency Applications;2023

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